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2.7V to 18V, 7A, Hot-Swap Solution
ABSOLUTE MAXIMUM RATINGS
IN to GND ..............................................................-0.3V to +20V
CB to GND ..............................................-0.3V to (V REG + 0.3V)
ON1, REG to GND ..................................................-0.3V to +6V
OUT, ON2 , PRESDET
to GND............... -0.3V to the lower of (V IN + 0.3V) and +20V
PG, FAULT to GND ...............................................-0.3V to +26V
Operating Ambient Temperature Range ........... -40 N C to +85 N C
Maximum Junction Temperature.....................................+150 N C
Storage Temperature Range............................ -60 N C to +150 N C
Lead Temperature (soldering, 10s) ................................+300 N C
Soldering Temperature (reflow) ......................................+260 N C
Continuous Power Dissipation (T A = +70 N C)
TQFN (derate 33.3mW/ N C above +70 N C) (Note 1) ..2666.7mW
Note 1: As per JEDEC51 standard (multilayer board).
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 2)
TQFN
Junction-to-Case Thermal Resistance ( B JC ) ...................30 N C/W
Junction-to-Ambient Thermal Resistance ( B JA ) ............... ...2 N C/W
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(V IN = 12V, V ON1 = 2V, V ON2 = V PRESDET = 0V, R CB = 40k I , T A = T J = -40 N C to +85 N C, unless otherwise noted. Typical values are
at T A = +25 N C.) (Note 3)
PARAMETER
Input Supply Voltage Range
Input Supply Current
Default Undervoltage Lockout
SYMBOL
V IN
I IN
V UVLO
CONDITIONS
V ON1 = 3V, no load, 7A current-limit
threshold
V IN rising, V ON1 = V IN
MIN
2.7
2.35
TYP
5
2.5
MAX
18
7.5
2.65
UNITS
V
mA
V
Default Undervoltage Lockout
Hysteresis
V UVLO_HYS
0.1
V
ON1 Turn-On Threshold
ON1 Turn-On Threshold
Hysteresis
ON1 Input Bias Current
V ON1_TH
V ON1_HYS
I ON1
V ON1 rising
V ON1 falling
V ON1 = 0 to 5V
1.17
-1
1.21
0.1
1.25
+1
V
V
F A
CURRENT LIMIT
R CB = 40k I
6.3
7
7.7
Circuit-Breaker Accuracy
(At Startup)
I CB,TH
R CB = 28.57k I
R CB = 20k I
4.5
3.15
5
3.5
5.5
3.85
A
R CB = 10k I
1.575
1.75
1.925
Slow-Comparator Response
Time (Note 4)
t SCD
0.6% overcurrent
30% overcurrent
2.7
200
ms
F s
MOSFET
Total On-Resistance
R ON
15
24
41
m I
LOGIC INPUTS ( ON2 , PRESDET )
Low Voltage Input
High Voltage Input
V IL
V IH
2.7V < V IN < 18V
2.7V < V IN < 18V
1.4
0.4
V
V
Input Current
I IN
V ON2 , V PRESDET = 0 to 6V
-1
+1
F A
2
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